Negócios em Emersão  ·  Vamos Emergir?  ·  Cadastre-se e ganhe 50 REC de bonus

Innovative etching method for silicon: Higher precision through interlayer

Redação Recifes
20 visualizações
Innovative etching method for silicon: Higher precision through interlayer

In micro- and nanotechnology, highly precise components with tall, narrow structures (high aspect ratios) made from semiconductor materials like silicon are important. A promising fabrication method is gas-phase metal-assisted chemical etching (MacEtch). In this plasma-free process, a thin metal layer defines the pattern on the silicon substrate. The etching step takes place in a chemical environment, where the reaction occurs only at the interface between the metal and silicon. The metal catalyst gradually sinks into the silicon, directing the etching deeper.

Discover Recifes.net

This story is part of Recifes international coverage. Explore the platform and follow us — new English social channels come next.

Artigo originalmente publicado em phys.org
Compartilhar:

Comentários

Seja o primeiro a comentar!